FDR836P mosfet equivalent, p-channel mosfet.
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-6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V
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High density cell design for extremely low RDS(ON). Small footprint (.
such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to .
SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide .
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